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IMBG120R350M1HXTMA1 IGBT Transistor Module N Channel 1200 V 4.7A 65W Surface Mount

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IMBG120R350M1HXTMA1 IGBT Transistor Module N Channel 1200 V 4.7A 65W Surface Mount

Name: IMBG120R350M1HXTMA1 IGBT Transistor Module N Channel 1200 V 47A 65W Surface Mount
Brand: Infineon Technologies
Price: 1 USD

Brand Name : Infineon Technologies

Model Number : IMBG120R350M1HXTMA1

MOQ : 50pcs

Price : Negotiable

Supply Ability : 1000000pcs

Drain to Source Voltage (Vdss) : 1200 V

Current - Continuous Drain (Id) @ 25°C : 4.7A (Tc)

Rds On (Max) @ Id, Vgs : 468mOhm @ 2A, 18V

Vgs(th) (Max) @ Id : 5.7V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 5.9 nC @ 18 V

Vgs (Max) : +18V, -15V

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IMBG120R350M1HXTMA1 N-Channel 1200 V 4.7A (Tc) 65W (Tc) Surface Mount PG-TO263-7-12

Infineon Technologies 1200V CoolSiC™ Modules

Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.

FEATURES

High current density
Best in class switching and conduction losses
Low inductive design
Low device capacitances
An intrinsic diode with reverse recovery charge
Integrated NTC temperature sensor
PressFIT contact technology

High efficiency for reduced cooling effort
Threshold-free on-state characteristics
Temperature independent switching losses
High-frequency operation
Increased power density
Optimized development cycle time and cost
RoHS compliant

SPECIFICATIONS

DF23MR12W1M1 and DF11MR12W1M1:
- Booster configuration
- Easy 1B configuration
- M1 technology
- 1200V voltage class
- 62.8mm x 33.8mm dimensions
FF8MR12W2M1 and FF6MR12W2M1:
- Dual configuration
- Easy 2B housing
- M1 technology
- 1200V voltage class
- 62.8mm x 48mm dimensions
F423MR12W1M1P:
- FourPack configuration
- Easy 1B configuration
- M1 technology
- 1200V voltage class
- 62.8mm x 33.8mm dimensions

FF11MR12W1M1, FF45MR12W1M1, and FF23MR12W1M1:
- Dual configuration
- Easy 1B housing
- M1 technology
- 1200V voltage class
- 62.8mm x 33.8mm dimensions
F3L11MR12W2M1:
- 3-level configuration
- Easy 2B configuration
- M1 technology
- 1200V voltage class
- 42.5mm x 51mm dimensions
FS45MR12W1M1:
- SixPACK configuration
- Easy 1B housing
- M1 technology
- 1200V voltage class
- 62.8mm x 33.8mm dimensions

ADDITIONAL RESOURCES

CIRCUIT DIAGRAMS

IMBG120R350M1HXTMA1 IGBT Transistor Module N Channel 1200 V 4.7A 65W Surface Mount

PERFORMANCE GRAPH

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